| PART |
Description |
Maker |
| PSM-2A-500B PSM-2A-60 PSM-2A-10B |
100V Quad N-Channel MOSFET in a MO-036AB package; A IRHG7110 with Standard Packaging
-100V 100kRad Hi-Rel Quad P -Channel TID Hardened MOSFET in a MO-036AB package; Similar to IRHG597110 with optional Total Dose Rating of 300kRads
-100V 100kRad Hi-Rel Quad P -Channel TID Hardened MOSFET in a MO-036AB package; A IRHG597110 with Standard Packaging
PHASE SHIFTERS, MANUAL
|
Merrimac Industries, Inc.
|
| IRHQ7110 IRHQ4110 IRHQ8110 IRHQ3110 IRHQ8110N IRHQ |
100V Quad N-Channel MOSFET in a 28-pin LCC package
100V 1000kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a 28-pin LCC package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
100V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a 28-pin LCC package
|
IRF[International Rectifier]
|
| AM29C943DE AM29C941PC AM29C941DC |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package; Similar to IRHG6110 with optional Total Dose Rating of 300kRads
100V Quad N-Channel MOSFET in a 28-pin LCC package; Similar to IRHQ7110 with optional Total Dose Rating of 500kRads 10位D型锁存器
100V Quad P-Channel MOSFET in a 28-pin LCC package; A IRHQ9110 with Standard Packaging 10位D型锁存器
|
FCI
NXP Semiconductors N.V.
|
| JANTXV2N7335 JANTX2N7335 IRFG9110 IRFG9110P IRFG91 |
Simple Drive Requirements
POWER MOSFET THRU-HOLE (MO-036AB)
100V Quad P-Channel MOSFET in a MO-036AB package
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
|
IRF[International Rectifier]
|
| AM29DL162DT120WCE AM29DL162DT120WCEN AM29DL163DB12 |
400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A JANTXV2N6792 with Standard Packaging
x8/x16 Flash EEPROM
100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A IRLF120 with Standard Packaging
500V Single N-Channel Hi-Rel MOSFET in a TO-204AE package; A IRF460 with Standard Packaging
400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A IRFF310 with Standard Packaging
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package; A IRFY140CM with Standard Packaging
60V Single N-Channel Hi-Rel MOSFET in a D3 package; A IRFMJ044 with Standard Packaging
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package; A IRFY9140CM with Standard Packaging x8/x16闪存EEPROM
55V Single N-Channel Hi-Rel MOSFET in a TO-257AA package; A IRF5YZ48CM with Standard Packaging x8/x16闪存EEPROM
400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A JANTXV2N6786 with Standard Packaging EEPROM
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package; A IRF5Y9540CM with Standard Packaging x8/x16闪存EEPROM
-100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package; A IRF9130 with Standard Packaging x8/x16闪存EEPROM
100V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package; A JANTX2N6782U with Standard Packaging x8/x16闪存EEPROM
1000V Single N-Channel Hi-Rel MOSFET in a TO-204AA package; A IRFAG40 with Standard Packaging EEPROM
|
PLX Technology, Inc.
|
| FQI44N10 FQB44N10 FQB44N10TM |
100V N-Channel QFET
100V N-Channel MOSFET 43.5 A, 100 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
| JANS2N6849 JANTXV2N6849 JANTX2N6849 2489 IRFF9130 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package
HEXFET? TRANSISTORS
From old datasheet system
POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
|
IRF[International Rectifier]
|
| IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 8A条（丁）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 4.9AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 28A条（丁）|04AE
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五（巴西）直| 600毫安（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五（巴西）直|5A条（丁）|04AE
|
Black Box, Corp.
Bourns, Inc.
Vishay Intertechnology, Inc.
Samsung Semiconductor Co., Ltd.
3M Company
|
| IRHN7150 JANSF2N7268U JANSH2N7268U IRHN3150 IRHN41 |
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
CORD, COILED, 10MM STUD-4MM SKT, 4M; Length, lead:4m RoHS Compliant: NA
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) 抗辐射功率MOSFET表面贴装系统（SMD - 1
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRHQ593110 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) 100V, Quad P-CHANNEL
|
International Rectifier
|
| FDD3682 FDD3682NL |
N-Channel PowerTrench MOSFET, 100V, 32A, 0.036 ohm 5.5 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-Channel PowerTrench MOSFET 100V/ 32A/ 36m
N-Channel PowerTrench MOSFET 100V, 32A, 36mз
N-Channel PowerTrench MOSFET 100V, 32A, 36m?/a>
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
